| A | B |
|---|
| Wafer slicing | Slice the ingot into individual wafers |
| Automation | Precise immersion timing and wafer protection from human handling |
| Ashing | A procedure where a high-temperature plasma is used to selectively remove photoresist without damaging device layers |
| EPI | A process that grows a layer of single crystal silicon from vapor into a single crystal silicon substrate at high temperatures |
| Wafer cleaning | A 3-step process that removes impurities and particles from the wafer surface |
| Polysilicon creation | mixing trichlorosilane with hydrogen gas in a reaction furnace |
| Stepper | A tool that exposes the photoresist coated wafer to single wavelength UV light passing through a reticle which contains the image of a single device layer |
| SRD | A tool taht cleans the wafer with RO / DI water and dries it with UHP Nitrogen |
| Dopant ions | They change the conduction of a precise region (p-type / n-type) |
| CVD | A broad class of controlled chemical reactions to create layers on wafers |
